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Home › Utilization of angled trench for effective aspect ratio trapping of defects in strain-relaxed heteroepitaxy of semiconductor films

Utilization of angled trench for effective aspect ratio trapping of defects in strain-relaxed heteroepitaxy of semiconductor films

US Patent 9799531 · Granted Oct 24, 2017

Estimated economic value: $27,129,000 ⓘ

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