Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for fabricating substrate of semiconductor device including epitaxial layer and silicon layer having same crystalline orientation

Method for fabricating substrate of semiconductor device including epitaxial layer and silicon layer having same crystalline orientation

US Patent 9793296 · Granted Oct 17, 2017

Estimated economic value: $207,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Source/drain metal contact and formation thereof2025
Semiconductor device with metal cap on gate2025
Multi-loop cycling heat dissipation module2025
Memory circuit and write method2025
Semiconductor device2025
Transistor, memory device and manufacturing method of memory device2025
Centrifugal heat dissipation fan2025
Foldable electronic device2025
Method for forming a 3-D semiconductor memory structure comprising horizontal an2025
Thermal module2025
Three-dimensional stackable ferroelectric random access memory devices and metho2025
Semiconductor device structure2025