Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a BICMOS semiconductor chip that increases the betas of the bipolar transistors

Method of forming a BICMOS semiconductor chip that increases the betas of the bipolar transistors

US Patent 9595480 · Granted Mar 14, 2017

Estimated economic value: $18,557,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Breakdown diodes and methods of making the same2025
Breakdown diodes and methods of making the same2025
LOCOS fillet for drain reduced breakdown in high voltage transistors2025
Vertical deep trench and deep trench island based deep n-type well diode and dio2025
Rugged LDMOS with field plate2025
Laterally diffused metal-oxide semiconductor (LDMOS) transistor with integrated 2025
False collectors and guard rings for semiconductor devices2025
Semiconductor doped region with biased isolated members2025
Low cost, high performance analog metal oxide semiconductor transistor2024
DMOS transistor having thick gate oxide and STI and method of fabricating2024
DMOS transistor having thick gate oxide and STI and method of fabricating2024
False collectors and guard rings for semiconductor devices2024