Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Perpendicular magnetic anisotropy BCC multilayers

Perpendicular magnetic anisotropy BCC multilayers

US Patent 9484531 · Granted Nov 1, 2016

Estimated economic value: $3,150,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Reactive serial resistance reduction for magnetoresistive random-access memory d2025
Magnetic exchange coupled MTJ free layer having low switching current and high d2025
Magnetic exchange coupled MTJ free layer having low switching current and high d2025
Low RA narrow base modified double magnetic tunnel junction structure2024
Low RA narrow base modified double magnetic tunnel junction structure2024
Spin-orbit-torque magnetoresistive random-access memory array2024
MRAM structure with enhanced magnetics using seed engineering2024
Double spin filter tunnel junction2023
Multilayered magnetic free layer structure containing an ordered magnetic alloy 2023
Multilayered magnetic free layer structure containing an ordered magnetic alloy 2023
In-situ annealing and etch back steps to improve exchange stiffness in cobalt ir2022
In-situ annealing and etch back steps to improve exchange stiffness in cobalt ir2022