Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Isolated and bulk semiconductor devices formed on a same bulk substrate

Isolated and bulk semiconductor devices formed on a same bulk substrate

US Patent 9425212 · Granted Aug 23, 2016

Estimated economic value: $16,730,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Nanowire transistor fabrication with hardmask layers2025
Asynchronous carry-ripple adder with majority or minority gates2025
Ripple carry adder with ferroelectric or paraelectric wide-input minority or maj2025
Diode connected non-linear input capacitors based majority gate2025
Non-linear polar material based low power multiplier with transmission-gate base2025
Gate coupled non-linear polar material based capacitors for memory and logic2025
Asynchronous full-adder with majority or minority gates to generate carry-out tr2025
Asynchronous full-adder with majority or minority gates to generate carry-out fa2025
Asynchronous full-adder with majority or minority gates to generate sum false ou2025
Ferroelectric or paraelectric wide-input minority or majority gate based low pow2025
Methods of fabricating planar capacitors on a shared plate electrode2025
Field effect transistors with a gated oxide semiconductor source/drain spacer2025