Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods of forming a complex GAA FET device at advanced technology nodes

Methods of forming a complex GAA FET device at advanced technology nodes

US Patent 9412848 · Granted Aug 9, 2016

Estimated economic value: $2,792,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Process for colouring a thermoplastic polymer2025
Multi-layer integrated circuit routing tool2025
Structures for a field-effect transistor that include a spacer structure2025
Polyether block amide-poly(meth)acrylate foams2024
Ferroelectric nonvolatile memory device and integration schemes2023
Non-volatile memory structure using semiconductor layer as floating gate and bul2023
Device including a floating gate electrode and a layer of ferroelectric material2022
Transistor with phase transition material region between channel region and each2022
Semiconductor circuit design and unit pin placement2022
Light scattering polymeric composition with improved scattering efficiency and i2022
Semiconductor circuit design and unit pin placement2021
Method and apparatus for wiring multiple technology evaluation circuits2021