Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Development of high etch selective hardmask material by ion implantation into amorphous carbon films

Development of high etch selective hardmask material by ion implantation into amorphous carbon films

US Patent 9412613 · Granted Aug 9, 2016

Estimated economic value: $15,983,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Total or local thickness variation for optical devices2025
Airgap structures for improved eyepiece efficiency2025
Pulsed plasma (DC/RF) deposition of high quality C films for patterning2025
Pulsed plasma (DC/RF) deposition of high quality C films for patterning2025
Processes for depositing SiB films2025
Method for forming integrated circuit structures2025
Directional selective fill for silicon gap fill processes2025
High density carbon films for patterning applications2025
High density carbon films for patterning applications2025
NAND cell structure with charge trap cut2025
Atomic layer deposition on optical structures2025
Electronic device fabrication using area-selective deposition2025