{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Work function metal fill for replacement gate fin field effect transistor process", "item": "https://www.patentleaderboard.com/patent/9406746"}]}
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Home › Work function metal fill for replacement gate fin field effect transistor process

Work function metal fill for replacement gate fin field effect transistor process

US Patent 9406746 · Granted Aug 2, 2016

Estimated economic value: $5,615,000 ⓘ

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