Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Utilization of angled trench for effective aspect ratio trapping of defects in strain relaxed heteroepitaxy of semiconductor films

Utilization of angled trench for effective aspect ratio trapping of defects in strain relaxed heteroepitaxy of semiconductor films

US Patent 9406507 · Granted Aug 2, 2016

Estimated economic value: $10,698,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Methods of correlating zones of processing chambers, and related systems and met2025
Multizone lamp control and individual lamp control in a lamphead2025
Methods for detection using optical emission spectroscopy2025
Method for forming silicon-phosphorous materials2025
Conditioning of a processing chamber2025
Temperature profile measurement and synchronized control on substrate and suscep2025
Methods and systems for cleaning high aspect ratio structures2024
Multi zone spot heating in EPI2024
Method for epitaxially depositing a material on a substrate by flowing a process2024
Method for epitaxially depositing a material on a substrate by flowing a process2024
High-density substrate processing systems and methods2024
Chamber architecture for epitaxial deposition and advanced epitaxial film applic2024