Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array

Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array

US Patent 9343665 · Granted May 17, 2016

Estimated economic value: $4,120,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Small grain size polysilicon engineering for threshold voltage mismatch improvem2025
Microelectronic devices, memory devices, and 3D NAND flash memory devices2025
Pitch reduction technology using alternating spacer depositions during the forma2025
Repair techniques for coupled memory dies2025
Methods of forming microelectronic devices, and related microelectronic devices,2025
Fin field-effect transistor semiconductor device and method of forming the same2025
Monolithic conductive column in a semiconductor device and associated methods2025
Monolithic conductive cylinder in a semiconductor device and associated methods2025
Semiconductor device assemblies and associated methods2025
Dielectric silicon nitride barrier deposition process for improved metal leakage2025
Testing memory of wafer-on-wafer bonded memory and logic2025
Front end of line interconnect structures and associated systems and methods2025