Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Directional SiO2 etch using plasma pre-treatment and high-temperature etchant deposition

Directional SiO2 etch using plasma pre-treatment and high-temperature etchant deposition

US Patent 9245769 · Granted Jan 26, 2016

Estimated economic value: $7,094,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Methods and apparatus for enhancing selectivity of titanium and titanium silicid2025
Method for preventing line bending during metal fill process2025
Deposition of films using molybdenum precursors2025
Molybdenum fill2025
Vapor accumulator for corrosive gases with purging2025
Rare earth nanocrystal for highly efficient NIR to NIR wavelength conversions2024
System and method for mobile device phosphor excitation and detection2024
Apparatus and method for enhancing the safety of laser based systems2024
Tagging of fracking sand2024
Atomic layer deposition of metal films2024
Methods for depositing fluorine/carbon-free conformal tungsten2024
Multi-step pre-clean for selective metal gap fill2023