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Home › Metal-insulator-metal (MIM) capacitor with deep trench (DT) structure and method in a silicon-on-insulator (SOI)

Metal-insulator-metal (MIM) capacitor with deep trench (DT) structure and method in a silicon-on-insulator (SOI)

US Patent 9224797 · Granted Dec 29, 2015

Estimated economic value: $610,000 ⓘ

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