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Home › Raised source/drain MOS transistor and method of forming the transistor with an implant spacer and an epitaxial spacer

Raised source/drain MOS transistor and method of forming the transistor with an implant spacer and an epitaxial spacer

US Patent 9178038 · Granted Nov 3, 2015

Estimated economic value: $14,269,000 ⓘ

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