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Home › Scatterometry metrology methods and methods of modeling formation of a vertical region of a multilayer semiconductor substrate to comprise a scatterometry target

Scatterometry metrology methods and methods of modeling formation of a vertical region of a multilayer semiconductor substrate to comprise a scatterometry target

US Patent 9146193 · Granted Sep 29, 2015

Estimated economic value: $6,069,000 ⓘ

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