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Home › Semiconductor-on-insulator (SOI) structure with selectivity placed sub-insulator layer void(s) and method of forming the SOI structure

Semiconductor-on-insulator (SOI) structure with selectivity placed sub-insulator layer void(s) and method of forming the SOI structure

US Patent 9059203 · Granted Jun 16, 2015

Estimated economic value: $2,098,000 ⓘ

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