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Home › Methods and apparatus for forming tantalum silicate layers on germanium or III-V semiconductor devices

Methods and apparatus for forming tantalum silicate layers on germanium or III-V semiconductor devices

US Patent 8993058 · Granted Mar 31, 2015

Estimated economic value: $7,138,000 ⓘ

Assignee

Applied Materials

Inventors

Jeffrey W. Anthis (75 patents)
Khaled Ahmed (32 patents)

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