Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of fabricating slanted field-plate GaN heterojunction field-effect transistor

Method of fabricating slanted field-plate GaN heterojunction field-effect transistor

US Patent 8980759 · Granted Mar 17, 2015

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Wafer-scale direct bonded array core block for an active electronically steerabl2025
Laterally-gated transistors and lateral Schottky diodes with integrated lateral 2025
Electron beam lithography with a bilayer resist2025
Self-passivated nitrogen-polar III-nitride transistor2025
Singulation process for chiplets2024
Laterally-gated transistors and lateral Schottky diodes with integrated lateral 2024
Low cost panel AESA with thermal management2024
Miniature field plate T-gate and method of fabricating the same2023
Method for creating cavities in silicon carbide and other semiconductor substrat2023
Ohmic contact for multiple channel FET2023
Dual-band monolithic microwave IC (MMIC) power amplifier2022
Antenna sub-array blocks having heat dissipation2022