Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Self-passivated nitrogen-polar III-nitride transistor

Self-passivated nitrogen-polar III-nitride transistor

US Patent 12230702 · Granted Feb 18, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor materials and devices including iii-nitride layers integrated with2025
Binary III-nitride 3DEG heterostructure HEMT with graded channel for high linear2022
Resonant sensing device2022
Highly scaled linear GaN HEMT Structures2020
Monolithic integration of group III nitride epitaxial layers2019
Vertical III-nitride semiconductor device with a vertically formed two dimension2019
Fabrication of microfluidic channels in diamond2019
Monolithic integration of group III nitride epitaxial layers2018
Stepped field plate wide bandgap field-effect transistor and method2018
Near junction cooling for GaN devices2016
Vertical III-nitride semiconductor device with a vertically formed two dimension2016
Etch-based fabrication process for stepped field-plate wide-bandgap2016