Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming transistors with ultra-short gate feature

Method of forming transistors with ultra-short gate feature

US Patent 8946003 · Granted Feb 3, 2015

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Memory device including composite metal oxide semiconductor channels and methods2025
Bonded assembly including interconnect-level bonding pads and methods of forming2025
Three-dimensional nor array and method of making the same2025
Three-dimensional nor array and method of making the same2025
Three dimensional memory device containing resonant tunneling barrier and high m2025
Three dimensional memory device containing resonant tunneling barrier and high m2025
Three dimensional memory device containing resonant tunneling barrier and high m2025
Bonded assembly containing different size opposing bonding pads and methods of f2024
Memory device including a ferroelectric semiconductor channel and methods of for2024
Wafer-bonding structure and method of forming thereof2024
Three dimensional memory device containing resonant tunneling barrier and high m2024
Three-dimensional memory device with vertical field effect transistors and metho2024