Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › FET dielectric reliability enhancement

FET dielectric reliability enhancement

US Patent 8916427 · Granted Dec 23, 2014

Estimated economic value: $21,013,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Gallium nitride device having a combination of surface passivation layers2025
Gallium nitride transistor with a doped region2024
Fringe capacitor, integrated circuit and manufacturing process for the fringe ca2024
Gallium nitride (GaN) based transistor with multiple p-GaN blocks2024
Strapped copper interconnect for improved electromigration reliability2024
Normally-on gallium nitride based transistor with p-type gate2024
Monolithic integration of high and low-side GaN FETs with screening back gating 2024
Gallium nitride transistor with a doped region2023
HEMT having conduction barrier between drain fingertip and source2021
HEMT wafer probe current collapse screening2021
Gallium nitride (GaN) based transistor with multiple p-GaN blocks2021
Gallium nitride transistor with a doped region2021