Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Monolithic integration of high and low-side GaN FETs with screening back gating effect

Monolithic integration of high and low-side GaN FETs with screening back gating effect

US Patent 11888027 · Granted Jan 30, 2024

Estimated economic value: $26,572,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Gallium nitride device having a combination of surface passivation layers2025
Group III-V IC with different sheet resistance 2-DEG resistors2025
P type gallium nitride conformal epitaxial structure over thick buffer layer2024
Gallium nitride transistor with a doped region2024
Gallium nitride transistor with a doped region2024
Firewall drift monitoring and detection2024
Electronic device with gallium nitride transistors and method of making same2024
Electronic device with gallium nitride transistors and method of making same2024
Fringe capacitor, integrated circuit and manufacturing process for the fringe ca2024
Gallium nitride (GaN) based transistor with multiple p-GaN blocks2024
Gallium nitride (GaN) based transistor with multiple p-GaN blocks2024
Strapped copper interconnect for improved electromigration reliability2024