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Home › High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture

High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture

US Patent 8901566 · Granted Dec 2, 2014

Estimated economic value: $2,384,000 ⓘ

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