Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Tin doped III-V material contacts

Tin doped III-V material contacts

US Patent 8896066 · Granted Nov 25, 2014

Estimated economic value: $33,083,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Double-sided integrated circuit transistor structures with depopulated bottom ch2025
Package architecture of photonic system with vertically stacked dies having plan2025
Gate-all-around integrated circuit structures having underlying dopant-diffusion2025
Gate-all-around integrated circuit structures having underlying dopant-diffusion2025
Source or drain structures with relatively high germanium content2025
Integrated circuit devices with angled transistors formed based on angled wafers2025
Integrated circuit structures having ultra-high conductivity global routing2025
Staircase-based metal-insulator-metal (MIM) capacitors2025
Reduced contact resistivity with PMOS germanium and silicon doped with boron gat2025
Co-deposition of titanium and silicon for improved silicon germanium source and 2025
Co-deposition of titanium and silicon for improved silicon germanium source and 2025
Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor 2025