Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for producing a field effect transistor with a SiGe channel by ion implantation

Method for producing a field effect transistor with a SiGe channel by ion implantation

US Patent 8877618 · Granted Nov 4, 2014

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Quantum device and method for producing the same2025
Coherent sampling true random number generation in FD-SOI technology2025
Data logic processing circuit integrated in a data storage circuit2025
Method for co-manufacturing a ferroelectric memory and an OxRAM resistive memory2025
Device comprising electrostatic control gates distributed on two opposite faces 2025
Device with two superposed electrostatic control gate levels2025
Integrated structure with bifunctional routing and assembly comprising such a st2025
Method for increasing the surface roughness of a metal layer2025
Method for modifying the strain state of a block of a semiconducting material2025
Method for increasing the surface roughness of a metal layer2024
Memory circuit comprising a plurality of 1T1R memory cells2024
Method of making a quantum device2024