Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Transistors and semiconductor devices with oxygen-diffusion barrier layers

Transistors and semiconductor devices with oxygen-diffusion barrier layers

US Patent 8853792 · Granted Oct 7, 2014

Estimated economic value: $3,692,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Three-dimensional memory device having on-pitch drain select gate electrodes and2023
Bonded three-dimensional memory devices and methods of making the same by replac2021
Method for removing a bulk substrate from a bonded assembly of wafers2021
Three-dimensional memory device containing alternating stack of source layers an2021
Three-dimensional device with bonded structures including a support die and meth2021
Three-dimensional memory device containing alternating stack of source layers an2021
Through-array conductive via structures for a three-dimensional memory device an2020
Multi-tier three-dimensional memory devices containing annular dielectric spacer2020
Three-dimensional memory device containing bond pad-based power supply network f2020
Method for removing a bulk substrate from a bonded assembly of wafers2020
Channel region dopant control in fin field effect transistor2020
Bonded three-dimensional memory devices and methods of making the same by replac2020