Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method and apparatus for characterizing discontinuities in semiconductor devices

Method and apparatus for characterizing discontinuities in semiconductor devices

US Patent 8761489 · Granted Jun 24, 2014

Estimated economic value: $2,752,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of manufacturing microelectronic components2024
Aqua regia and hydrogen peroxide HCL combination to remove Ni and NiPt residues2016
Gate silicidation2015
Aqua regia and hydrogen peroxide HCI combination to remove Ni and NiPt residues2015
Gate silicidation2014
Stabilized metal silicides in silicon-germanium regions of transistor elements2014
NiSi rework procedure to remove platinum residuals2014
HNO3 single wafer clean process to strip nickel and for MOL post etch2014
Methods of forming metal silicide regions on semiconductor devices using differe2014
Aqua regia and hydrogen peroxide HCl combination to remove Ni and NiPt residues2014
Methods of forming metal silicide regions on semiconductor devices2014
Aqua regia and hydrogen peroxide HCl combination to remove Ni and NiPt residues2013