Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › MOS transistors including SiON gate dielectric with enhanced nitrogen concentration at its sidewalls

MOS transistors including SiON gate dielectric with enhanced nitrogen concentration at its sidewalls

US Patent 8748992 · Granted Jun 10, 2014

Estimated economic value: $5,851,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Integratead wet clean for bevel treatments2025
Cleaning method with in-line SPM processing2024
Surface cleaning with directed high pressure chemistry2024
Reduced semiconductor wafer bow and warpage2024
Cleaning system with in-line SPM processing2023
Split gate memory cell fabrication and system2022
Method for stripping one or more layers from a semiconductor wafer2021
Dopant anneal with stabilization step for IC with matched devices2021
Integrated circuit having chemically modified spacer surface2019
Methods to enhance effective work function of mid-gap metal by incorporating oxy2019
High-K metal gate2018
Method of fabricating semiconductors2018