Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a spin-transfer torque random access memory (STT-RAM) device

Method of forming a spin-transfer torque random access memory (STT-RAM) device

US Patent 8726491 · Granted May 20, 2014

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for forming a perpendicular spin torque oscillator (PSTO) including formi2025
Multilayer structure for reducing film roughness in magnetic devices2025
Perpendicularly magnetized ferromagnetic layers having an oxide interface allowi2025
Protective passivation layer for magnetic tunnel junctions2025
Silicon oxynitride based encapsulation layer for magnetic tunnel junctions2024
Magnetic layer for magnetic random access memory (MRAM) by moment enhancement2024
Dual magnetic tunnel junction (DMTJ) stack design2024
Free layer structure in magnetic random access memory (MRAM) for Mo or W perpend2024
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spi2024
Reduction of capping layer resistance area product for magnetic device applicati2024
Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular2024
Nitride capping layer for spin torque transfer (STT) magnetoresistive random acc2023