Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)

Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)

US Patent 11849646 · Granted Dec 19, 2023

Estimated economic value: $9,903,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)2025
Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)2025
Method for forming a perpendicular spin torque oscillator (PSTO) including formi2025
Method for forming a perpendicular spin torque oscillator (PSTO) including formi2025
Method for forming a perpendicular spin torque oscillator (PSTO) including formi2025
Multilayer structure for reducing film roughness in magnetic devices2025
Multilayer structure for reducing film roughness in magnetic devices2025
Multilayer structure for reducing film roughness in magnetic devices2025
Multilayer structure for reducing film roughness in magnetic devices2025
Multilayer structure for reducing film roughness in magnetic devices2025
Multilayer structure for reducing film roughness in magnetic devices2025
Etching and encapsulation scheme for magnetic tunnel junction fabrication2025