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Home › Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer

Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer

US Patent 12027191 · Granted Jul 2, 2024

Estimated economic value: $16,937,000 ⓘ

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