Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods of channel stress engineering and structures formed thereby

Methods of channel stress engineering and structures formed thereby

US Patent 8716806 · Granted May 6, 2014

Estimated economic value: $12,959,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

System and method for validating critical paths of integrated circuits2025
Wrap-around trench contact structure and methods of fabrication2025
Gate-all-around integrated circuit structures having devices with channel-to-sub2025
Source/drain regions in integrated circuit structures2025
Fabrication of gate-all-around integrated circuit structures having pre-spacer d2025
Integrated circuit structures having metal gates with tapered plugs2025
Vertical integration scheme and circuit elements architecture for area scaling o2025
Gate-all-around integrated circuit structures having uniform threshold voltages 2025
Fabrication of gate-all-around integrated circuit structures having additive met2025
Gate-all-around integrated circuit structures having devices with source/drain-t2025
Gate-all-around integrated circuit structures having insulator fin on insulator 2025
Pattern decomposition lithography techniques2025