Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › AlGaN/GaN hybrid MOS-HFET

AlGaN/GaN hybrid MOS-HFET

US Patent 8653559 · Granted Feb 18, 2014

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Self-passivated nitrogen-polar III-nitride transistor2025
Doped gate dielectrics materials2022
In situ fabrication of horizontal nanowires and device using same2022
III-nitride field-effect transistor with dual gates2021
Digital alloy based back barrier for P-channel nitride transistors2021
Semiconductor device having in situ formed horizontal nanowire structure2021
FET transistor on a III-V material structure with substrate transfer2021
Low modulation-voltage cryogenic diode structure2021
Doped gate dielectric materials2021
Highly scaled linear GaN HEMT Structures2020
HEMT GaN device with a non-uniform lateral two dimensional electron gas profile 2020
III-nitride field-effect transistor with dual gates2020