Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio

Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio

US Patent 8629067 · Granted Jan 14, 2014

Estimated economic value: $25,031,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Self-aligned wide backside power rail contacts to multiple transistor sources2025
Selective etching between silicon-and-germanium-containing materials with varyin2025
Semiconductor chamber components with advanced dual layer nickel-containing coat2025
Selective etching of silicon-and-germanium-containing materials with increased s2025
Low temperature graphene growth2025
Multi color stack for self aligned dual pattern formation for multi purpose devi2025
Multi color stack for self aligned dual pattern formation for multi purpose devi2025
Integrated flowable low-k gap-fill and plasma treatment2025
Methods for removing etch stop layers2025
Methods of highly selective silicon oxide removal2025
Semiconductor substrate support power transmission components2025
Metal oxide directional removal2025