{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Metal oxide semiconductor field effect transistor (MOSFET) gate termination", "item": "https://www.patentleaderboard.com/patent/8629028"}]}
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Home › Metal oxide semiconductor field effect transistor (MOSFET) gate termination

Metal oxide semiconductor field effect transistor (MOSFET) gate termination

US Patent 8629028 · Granted Jan 14, 2014

Estimated economic value: $7,408,000 ⓘ

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