Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Programming of memory cells in a nonvolatile memory using an active transition control

Programming of memory cells in a nonvolatile memory using an active transition control

US Patent 8238158 · Granted Aug 7, 2012

Estimated economic value: $12,867,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Select gate self-aligned patterning in split-gate flash memory cell2025
Method for suppressing gate oxide tunnel current in non-volatile memory to reduc2023
Split gate memory cell fabrication and system2022
Partially disposed gate layer into the trenches2021
Isolated well contact in semiconductor devices2020
Select gate self-aligned patterning in split-gate flash memory cell2020
Method for suppressing gate oxide tunnel current in non-volatile memory to reduc2020
Partially disposed gate layer into the trenches2019
Select gate self-aligned patterning in split-gate flash memory cell2018
Isolated well contact in semiconductor devices2017
Adaptive programming for flash memories2013
Adaptive programming for flash memories2013