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Home › EPI substrate with low doped EPI layer and high doped Si substrate layer for media growth on EPI and low contact resistance to back-side substrate

EPI substrate with low doped EPI layer and high doped Si substrate layer for media growth on EPI and low contact resistance to back-side substrate

US Patent 8072016 · Granted Dec 6, 2011

Estimated economic value: $25,306,000 ⓘ

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