Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming multiple fins for a semiconductor device

Method of forming multiple fins for a semiconductor device

US Patent 8003466 · Granted Aug 23, 2011

Estimated economic value: $5,509,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Intermittent characteristic-based demand-side resource coordination control meth2025
Merged PiN Schottky (MPS) diode with plasma spreading layer and manufacturing me2024
Merged PiN Schottky (MPS) diode with plasma spreading layer and manufacturing me2023
Metal terminal edge for semiconductor structure and method of forming the same2022
High density capacitors formed from thin vertical semiconductor structures such 2020
Mixed trench junction barrier Schottky diode and method fabricating same2020
Schottky diode having double p-type epitaxial layers with high breakdown voltage2020
Passivation for silicon carbide (SiC) device and method for fabricating same2019
Systems and methods for fabricating a polycrystaline semiconductor resistor on a2018
Schottky barrier structure for silicon carbide (SiC) power devices2018
High density capacitors formed from thin vertical semiconductor structures such 2018
Systems and methods for fabricating a polycrystaline semiconductor resistor on a2017