Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High density capacitors formed from thin vertical semiconductor structures such as FINFETs

High density capacitors formed from thin vertical semiconductor structures such as FINFETs

US Patent 10867994 · Granted Dec 15, 2020

Estimated economic value: $41,827,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Integrated circuit with getter layer for hydrogen entrapment2025
Semiconductor device with transistor local interconnects2024
Semiconductor device with transistor local interconnects2022
Metal layer patterning for minimizing mechanical stress in integrated circuit pa2022
Dual device semiconductor structures with shared drain2021
Semiconductor device with transistor local interconnects2020
Dual gate metal-oxide-semiconductor field-effect transistor2020
Dual device semiconductor structures with shared drain2019
Correction for speaker monitoring2018
Systems and methods for fabricating a polycrystaline semiconductor resistor on a2018
Sense resistor surroundingly positioned near or around and integrated with an ou2018
High density capacitors formed from thin vertical semiconductor structures such 2018