Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor

N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor

US Patent 7948011 · Granted May 24, 2011

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor devices with a compositionally graded layer, and methods of making2025
Metal organic chemical vapor depostion (MOCVD) tunnel junction growth in III-nit2025
Lateral III-nitride devices including a vertical gate module2025
III-N based material structures, methods, devices and circuit modules based on s2025
Method to control the relaxation of thick films on lattice-mismatched substrates2025
High mobility group-III nitride transistors with strained channels2024
Gallium nitride (GaN) based transistor with multiple p-GaN blocks2024
Normally-on gallium nitride based transistor with p-type gate2024
N-polar devices including a depleting layer with improved conductivity2024
Monolithic integration of high and low-side GaN FETs with screening back gating 2024
Method of forming lateral pn junctions in III-nitrides using p-type and n-type c2023
Low turn on and high breakdown voltage lateral diode2023