Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductor applications

Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductor applications

US Patent 7906395 · Granted Mar 15, 2011

Estimated economic value: $1,649,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of spacer formation with straight sidewall of memory cells2025
Method of forming high-voltage transistor with thin gate poly2024
Gate fringing effect based channel formation for semiconductor device2024
Semiconductor having a source/drain contact with a single inner spacer2024
Contacts for semiconductor devices2023
Method of forming high-voltage transistor with thin gate poly2023
Split gate charge trapping memory cells having different select gate and memory 2022
Leakage current reduction in polysilicon-on-active-edge structures2022
Memory first process flow and device2022
Memory first process flow and device2022
Tilted implant for poly resistors2022
Tilted implant for poly resistors2022