Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fabricating a top conductive layer in a semiconductor die

Fabricating a top conductive layer in a semiconductor die

US Patent 7897484 · Granted Mar 1, 2011

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for forming a semiconductor structure having a porous semiconductor layer2025
Method for forming a semiconductor structure having a porous semiconductor layer2025
Method of manufacturing bipolar complementary-metal-oxide-semiconductor (BiCMOS)2025
Method of manufacturing nickel silicide in bipolar complementary-metal-oxide-sem2025
Discrete and monolithic phase-change material (PCM) radio frequency (RF) switche2023
Nickel silicide in bipolar complementary-metal-oxide-semiconductor (BiCMOS) devi2022
Semiconductor structure having porous semiconductor segment for RF devices and b2021
Semiconductor structure having porous semiconductor segment for RF devices and b2021
Radio frequency (RF) module using a tunable RF filter with non-volatile RF switc2021
Semiconductor structure having porous semiconductor layer for RF devices2021
Semiconductor structure having porous semiconductor layer for RF devices2021
High-yield tunable radio frequency (RF) filter with auxiliary capacitors and non2021