Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of manufacturing nickel silicide in bipolar complementary-metal-oxide-semiconductor (BiCMOS)

Method of manufacturing nickel silicide in bipolar complementary-metal-oxide-semiconductor (BiCMOS)

US Patent 12199090 · Granted Jan 14, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Efficient integration of a first substrate without solder bumps with a second su2025
Stress-reduced silicon photonics semiconductor wafer2025
Method for forming a semiconductor structure having a porous semiconductor layer2025
Method for forming a semiconductor structure having a porous semiconductor layer2025
Method of manufacturing bipolar complementary-metal-oxide-semiconductor (BiCMOS)2025
Method of manufacturing bipolar complementary-metal-oxide-semiconductor (BiCMOS)2025
Method of manufacturing bipolar complementary-metal-oxide-semiconductor (BiCMOS)2025
Integration of optoelectronic devices comprising lithium niobate or other Pockel2025
Group III-V device on group IV substrate using contacts with precursor stacks2024
Method for manufacturing a semiconductor structure having group III-V device on 2024
Structure and method for process control monitoring for group III-V devices inte2024
Silicon nitride hard mask for epitaxial germanium on silicon2023