Issued Patents All Time
Showing 1–25 of 47 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12374630 | Stress-reduced silicon photonics semiconductor wafer | Oleg Martynov, William A. Krieger | 2025-07-29 |
| 12347673 | Method for forming a semiconductor structure having a porous semiconductor layer in RF devices | Paul D. Hurwitz, David J. Howard, Marco Racanelli | 2025-07-01 |
| 12324226 | Method of manufacturing bipolar complementary-metal-oxide-semiconductor (BiCMOS) devices using nickel silicide | Mantavya Sinha, David J. Howard | 2025-06-03 |
| 12248206 | Integration of optoelectronic devices comprising lithium niobate or other Pockels materials | Oleg Martynov | 2025-03-11 |
| 12199090 | Method of manufacturing nickel silicide in bipolar complementary-metal-oxide-semiconductor (BiCMOS) | Mantavya Sinha, David J. Howard | 2025-01-14 |
| 12183845 | Group III-V device on group IV substrate using contacts with precursor stacks | Zhirong Tang | 2024-12-31 |
| 12009437 | Method for manufacturing a semiconductor structure having group III-V device on group IV substrate and contacts with liner stacks | Zhirong Tang | 2024-06-11 |
| 11929442 | Structure and method for process control monitoring for group III-V devices integrated with group IV substrate | — | 2024-03-12 |
| 11830961 | Silicon nitride hard mask for epitaxial germanium on silicon | Difeng Zhu | 2023-11-28 |
| 11581452 | Semiconductor structure having group III-V device on group IV substrate and contacts with precursor stacks | Zhirong Tang | 2023-02-14 |
| 11545587 | Semiconductor structure having group III-V device on group IV substrate and contacts with liner stacks | Zhirong Tang | 2023-01-03 |
| 11349280 | Semiconductor structure having group III-V device on group IV substrate | Oleg Martynov | 2022-05-31 |
| 11296482 | Semiconductor structure having group III-V chiplet on group IV substrate and cavity in proximity to heating element | Farnood Rezaie | 2022-04-05 |
| 11276682 | Nickel silicide in bipolar complementary-metal-oxide-semiconductor (BiCMOS) device and method of manufacturing | Mantavya Sinha, David J. Howard | 2022-03-15 |
| 11271028 | Germanium on insulator for CMOS imagers in the short wave infrared | Uriel Levy, Omer Kapach, Avraham Bakal, Assaf Lahav | 2022-03-08 |
| 11233159 | Fabrication of semiconductor structure having group III-V device on group IV substrate with separately formed contacts using different metal liners | Zhirong Tang | 2022-01-25 |
| 11195920 | Semiconductor structure having porous semiconductor segment for RF devices and bulk semiconductor region for non-RF devices | Paul D. Hurwitz, David J. Howard, Marco Racanelli | 2021-12-07 |
| 11164740 | Semiconductor structure having porous semiconductor layer for RF devices | Paul D. Hurwitz, David J. Howard, Marco Racanelli | 2021-11-02 |
| 11081610 | Anode up—cathode down silicon and germanium photodiode | Difeng Zhu | 2021-08-03 |
| 10996081 | Integrated optical/electrical probe card for testing optical, electrical, and optoelectronic devices in a semiconductor die | Yasir Qamar | 2021-05-04 |
| 10991631 | High performance SiGe heterojunction bipolar transistors built on thin-film silicon-on-insulator substrates for radio frequency applications | Paul D. Hurwitz, Marco Racanelli, David J. Howard | 2021-04-27 |
| 10892374 | Method for fabrication of germanium photodiode with silicon cap | Difeng Zhu | 2021-01-12 |
| 10892373 | Germanium photodiode with silicon cap | Difeng Zhu | 2021-01-12 |
| 10797132 | Heterojunction bipolar transistor fabrication using resist mask edge effects | Santosh Sharma | 2020-10-06 |
| 10649137 | Silicon-on-insulator (SOI) die including a light emitting layer pedestal-aligned with a light receiving segment | Oleg Martynov, Farnood Rezaie | 2020-05-12 |