Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor structure having porous semiconductor segment for RF devices and bulk semiconductor region for non-RF devices

Semiconductor structure having porous semiconductor segment for RF devices and bulk semiconductor region for non-RF devices

US Patent 11195920 · Granted Dec 7, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Efficient integration of a first substrate without solder bumps with a second su2025
Stress-reduced silicon photonics semiconductor wafer2025
Method for forming a semiconductor structure having a porous semiconductor layer2025
Method for forming a semiconductor structure having a porous semiconductor layer2025
Method for forming a semiconductor structure having a porous semiconductor layer2025
Method for forming a semiconductor structure having a porous semiconductor layer2025
Method of manufacturing bipolar complementary-metal-oxide-semiconductor (BiCMOS)2025
Method of manufacturing bipolar complementary-metal-oxide-semiconductor (BiCMOS)2025
Integration of optoelectronic devices comprising lithium niobate or other Pockel2025
Method of manufacturing nickel silicide in bipolar complementary-metal-oxide-sem2025
Method of manufacturing nickel silicide in bipolar complementary-metal-oxide-sem2025
Group III-V device on group IV substrate using contacts with precursor stacks2024