Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Mitigation of edge degradation in ferroelectric memory devices through plasma etch clean

Mitigation of edge degradation in ferroelectric memory devices through plasma etch clean

US Patent 7799582 · Granted Sep 21, 2010

Estimated economic value: $9,968,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Technique for GaN epitaxy on insulating substrates2025
Acoustic waveguide with diffraction grating2025
Through wafer trench isolation between transistors in an integrated circuit2024
Capacitor comprising a bismuth metal oxide-based lead titanate thin film2023
MEMS encapsulation employing lower pressure and higher pressure deposition proce2023
Aging compensation of a ferroelectric piezoelectric shock sensor2023
Dielectric and metallic nanowire bond layers2023
IC with 3D metal-insulator-metal capacitor2023
PH sensor2023
Low-temperature passivation of ferroelectric integrated circuits for enhanced po2022
Methods and apparatus for digital material deposition onto semiconductor wafers2022
Piezoelectric sensor apparatus2022