Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Trench isolation type semiconductor device which prevents a recess from being formed in a field region and method of fabricating the same

Trench isolation type semiconductor device which prevents a recess from being formed in a field region and method of fabricating the same

US Patent 7795110 · Granted Sep 14, 2010

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of detecting failure of a semiconductor device2020
Test element group and semiconductor wafer including the same2020
Semiconductor device having impurity doped polycrystalline layer including impur2014
Semiconductor devices having contact plugs with stress buffer spacers and method2013
Semiconductor devices having polysilicon gate layer patterns and methods of manu2012
Methods of fabricating MOS transistors having recesses with elevated source/drai2012
Method of forming insulating layer and method of manufacturing transistor using 2012
Methods of fabricating MOS transistors having recesses with elevated source/drai2011
Semiconductor memory devices having vertical channel transistors and related met2011
Semiconductor devices having contact plugs with stress buffer spacers and method2011
Method of fabricating semiconductor device having multiple gate dielectric layer2010
FinFET and method of manufacturing the same2010