Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of making double-gated self-aligned finFET having gates of different lengths

Method of making double-gated self-aligned finFET having gates of different lengths

US Patent 7785944 · Granted Aug 31, 2010

Estimated economic value: $3,369,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Pillow2025
Face pillow2025
Metallization stack and method of manufacturing the same, and electronic device 2025
Semiconductor apparatus with isolation portion between vertically adjacent eleme2025
Wearable device for monitoring bodily fluids2025
Bulk nanosheet with dielectric isolation2025
PVD tool to deposit highly reactive materials2025
Semiconductor apparatus, manufacturing method therefor, and electronic equipment2025
MRAM, method of manufacturing the same, and electronic device including the MRAM2025
Crossbeam for measuring deformation velocities of surface of material under dyna2025
Semiconductor device having ferroelectric layer in recess and method for manufac2025
Semiconductor device and method of manufacturing the same, and electronic appara2025