Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods for surface activation by plasma immersion ion implantation process utilized in silicon-on-insulator structure

Methods for surface activation by plasma immersion ion implantation process utilized in silicon-on-insulator structure

US Patent 7745309 · Granted Jun 29, 2010

Estimated economic value: $7,165,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Pulse train annealing method and apparatus2025
Supplemental energy for low temperature processes2024
Semiconductor processing tools with improved performance by use of hybrid learni2024
Methods for depositing fluorine/carbon-free conformal tungsten2024
Enhanced process and hardware architecture to detect and correct realtime produc2023
Semiconductor processing tools with improved performance by use of hybrid learni2023
Gas injector with baffle2022
Stacked pixel structure formed using epitaxy2022
Display screen or portion thereof with graphical user interface2022
Plasma-enhanced anneal chamber for wafer outgassing2022
Gas injector with baffle2021
Pulse train annealing method and apparatus2021