Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Phase change memory cells delineated by regions of modified film resistivity

Phase change memory cells delineated by regions of modified film resistivity

US Patent 7642549 · Granted Jan 5, 2010

Estimated economic value: $14,762,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Embedded metal contamination removal from BEOL wafers2025
Backside power rails and power distribution network for density scaling2025
Selective patterning of vias with hardmasks2025
Subtractive patterning of interconnect structures2024
Placing top vias at line ends by selective growth of via mask from line cut diel2023
Spin on scaffold film for forming topvia2023
Tufted pile fabric as framework for stretchable and wearable composite electrode2023
Embedding magneto-resistive random-access memory devices between metal levels2022
Method for fabricating a semiconductor device including self-aligned top via for2022
Selective gas etching for self-aligned pattern transfer2022
Selective patterning of vias with hardmasks2022
Litho-etch-litho-etch with self-aligned blocks2022