Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Embedding magneto-resistive random-access memory devices between metal levels

Embedding magneto-resistive random-access memory devices between metal levels

US Patent 11462583 · Granted Oct 4, 2022

Estimated economic value: $9,590,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Local interconnects having different material compositions2025
Local interconnects having different material compositions2025
Layered bottom electrode dielectric for embedded MRAM2025
Layered bottom electrode dielectric for embedded MRAM2025
Recessed local interconnect semiconductor memory device2025
Recessed local interconnect semiconductor memory device2025
Air gap in beol interconnect2025
MRAM structure with a T-shaped ferromagnetic layer2025
Back-end-of-line thin film resistor2025
Back-end-of-line thin film resistor2025
MRAM bottom electrode contact with taper profile2025
MRAM bottom electrode contact with taper profile2025